IRFD110 데이터 시트보기 (PDF) - Vishay Semiconductors
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IRFD110 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFD110, SiHFD110
Vishay Siliconix
VGS
Top
101
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
100
4.5 V
10-1
91127_01
20 µs Pulse Width
TA = 25 °C
100
101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TA = 25 °C
101
25 °C
175 °C
100
10-1
4
91127_03
20 µs Pulse Width
VDS = 50 V
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
100 Bottom 4.5 V
4.5 V
10-1
91127_02
20 µs Pulse Width
TA = 175 °C
100
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TA = 175 °C
3.0
ID = 5.6 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
91127_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91127
S10-2466-Rev. C, 25-Oct-10
www.vishay.com
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