IRFD110(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors

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IRFD110
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRFD110, SiHFD110

Vishay Siliconix

350

ID

300

Top 0.82 A

1.4 A

Bottom 2.0 A

250

200

150

100

50

0 VDD = 25 V

25

50

75

100 125 150 175

91127_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91127

S-81263-Rev. A, 21-Jul-08

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