IRFSL4610PBF 데이터 시트보기 (PDF) - International Rectifier

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IRFSL4610PBF

HEXFET Power MOSFET

International Rectifier 

1000

100

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

10

4.5V

1

0.1

≤ 60µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000.0

100.0

TJ = 175°C

10.0

1.0

0.1

2.0

TJ = 25°C

VDS = 25V

≤ 60µs PULSE WIDTH

3.0 4.0 5.0 6.0 7.0 8.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

6000

5000

4000

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

3000

2000

1000

Coss

Crss

0

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

www.irf.com

IRF/B/S/SL4610PbF

1000

100

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

4.5V

10

0.1

≤ 60µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.0

ID = 73A

VGS = 10V

2.5

2.0

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance vs. Temperature

20

ID= 44A

16

12

VDS= 80V

VDS= 50V

VDS= 20V

8

4

0

0 20 40 60 80 100 120 140

QG Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

3

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