IRF7484Q 데이터 시트보기 (PDF) - International Rectifier
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IRF7484Q Datasheet PDF : 10 Pages
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PD - 94803A
AUTOMOTIVE MOSFET
Typical Applications
O Relay replacement
O Anti-lock Braking System
O Air Bag
Benefits
O Advanced Process Technology
O Ultra Low On-Resistance
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
IRF7484Q
HEXFET® Power MOSFET
VDSS RDS(on) max (mW) ID
40V
10@VGS = 7.0V
14A
S
1
AA
8
D
S
2
7
D
Description
Specifically designed for Automotive applications, this S
3
6
D
Stripe Planar design of HEXFET® Power MOSFETs G 4
utilizes the latest processing techniques to achieve
5
D
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 150°C
Top View
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Max.
14
11
110
2.5
0.02
± 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
www.irf.com
1
01/04/05
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