IRF6635 데이터 시트보기 (PDF) - International Rectifier
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IRF6635 Datasheet PDF : 9 Pages
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IRF6635
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
30
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
VGS(th)
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs
Forward Transconductance
45
Qg
Total Gate Charge
–––
Qgs1
Pre-Vth Gate-to-Source Charge
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
Qgd
Gate-to-Drain Charge
–––
Qgodr
Gate Charge Overdrive
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
Qoss
Output Charge
–––
RG
Gate Resistance
–––
td(on)
Turn-On Delay Time
–––
tr
Rise Time
–––
td(off)
Turn-Off Delay Time
–––
tf
Fall Time
–––
Ciss
Input Capacitance
–––
Coss
Output Capacitance
–––
Crss
Reverse Transfer Capacitance
–––
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
–––
(Body Diode)
ISM
Pulsed Source Current
–––
(Body Diode)
VSD
Diode Forward Voltage
–––
trr
Reverse Recovery Time
–––
Qrr
Reverse Recovery Charge
–––
Typ.
–––
24
1.3
1.8
1.8
-6.1
–––
–––
–––
–––
–––
47
12
4.7
17
13
22
29
1.0
21
13
33
8.3
5970
1280
600
Typ.
–––
–––
–––
20
48
Max. Units
Conditions
–––
–––
1.8
2.4
2.35
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 32A
VGS = 4.5V, ID = 25A
V VDS = VGS, ID = 250µA
––– mV/°C
5.0
150
100
-100
–––
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 25A
71
–––
VDS = 15V
––– nC VGS = 4.5V
ID = 25A
–––
See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
–––
VDD = 16V, VGS = 4.5V
–––
ID = 25A
––– ns Clamped Inductive Load
–––
–––
VGS = 0V
––– pF VDS = 15V
–––
ƒ = 1.0MHz
Max. Units
Conditions
3.5
MOSFET symbol
A showing the
250
integral reverse
p-n junction diode.
1.0
V TJ = 25°C, IS = 25A, VGS = 0V
30 ns TJ = 25°C, IF = 25A
72 nC di/dt = 500A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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