IRF6100 데이터 시트보기 (PDF) - International Rectifier
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IRF6100 Datasheet PDF : 8 Pages
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l Ultra Low RDS(on) per Footprint Area
l Low Thermal Resistance
l P-Channel MOSFET
l One-third Footprint of SOT-23
l Super Low Profile (<.8mm)
l Available Tested on Tape & Reel
VDSS
-20V
PD - 93930E
IRF6100
HEXFET® Power MOSFET
RDS(on) max
0.065Ω@VGS = -4.5V
0.095Ω@VGS = -2.5V
ID
-5.1A
-4.1A
Description
True chip-scale packaging is available from International
Rectifier. Through the use of advanced processing tech-
niques, and a unique packaging concept, extremely low
on-resistance and the highest power densities in the
industry have been made available for battery and load
management applications. These benefits, combined with
G
the ruggedized device design , that International Rectifier
is well known for, provides the designer with an ex-
tremely efficient and reliable device.
The FlipFET™ package, is one-third the footprint of a
comparable SOT-23 package and has a profile of less
than .8mm. Combined with the low thermal resistance of
the die level device, this makes the FlipFET™ the best
device for application where printed circuit board space is
at a premium and in extremely thin application environ-
ments such as battery packs, cell phones and PCMCIA
cards.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
D
S
FlipFET ISOMETRIC
Max.
-20
±5.1
±3.5
±35
2.2
1.4
17
± 12
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJA
RθJ-PCB
Parameter
Junction-to-Ambient
Junction-to-PCB mounted
www.irf.com
Typ.
35
Max.
56.5
–––
Units
°C/W
1
5/2/05
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