IKW15T120 데이터 시트보기 (PDF) - Infineon Technologies

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IKW15T120

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

IKW15T120

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TrenchStop Series

8,0mJ

*) Eon and Etsinclude losses

due to diode recovery

6,0mJ

4,0mJ

Ets*

2,0mJ

Eoff

Eon*

0,0mJ

5A

10A

15A

20A

25A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, RG=56Ω,

Dynamic test circuit in Figure E)

*) Eon and Ets include losses

5 mJ

due to diode recovery

Ets*

4 mJ

3 mJ

2 mJ

Eon*

Eoff

1 mJ

0 mJ

5Ω

30Ω

55Ω

80Ω

RG, GATE RESISTOR

105Ω

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, TJ=150°C,

VCE=600V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

4mJ

*) Eon and Ets include losses

due to diode recovery

3mJ

Ets*

2mJ

Eoff

1m J Eon*

0mJ

50°C

100°C

150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, VCE=600V,

VGE=0/15V, IC=15A, RG=56Ω,

Dynamic test circuit in Figure E)

6mJ

*) Eon and Ets include losses

due to diode recovery

5mJ

4mJ

3mJ Ets*

2mJ Eoff

1mJ Eon*

0mJ

400V

500V

600V

700V

800V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, TJ=150°C,

VGE=0/15V, IC=15A, RG=56Ω,

Dynamic test circuit in Figure E)

Power Semiconductors

8

Preliminary / Rev. 1 Jul-02

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