IKW25T120(2008) 데이터 시트보기 (PDF) - Infineon Technologies

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IKW25T120
(Rev.:2008)

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop® Series

IKW25T120

Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

C

• Approx. 1.0V reduced VCE(sat)

and 0.5V reduced VF compared to BUP314D

• Short circuit withstand time – 10µs

• Designed for :

- Frequency Converters

G

E

- Uninterrupted Power Supply

• TrenchStop® and Fieldstop technology for 1200 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

PG-TO-247-3

• NPT technology offers easy parallel switching capability due to

positive temperature coefficient in VCE(sat)

• Low EMI

• Low Gate Charge

• Very soft, fast recovery anti-parallel EmCon HE diode

• Qualified according to JEDEC1 for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

VCE

IC VCE(sat),Tj=25°C Tj,max Marking Code

IKW25T120 1200V 25A

1.7V

150°C K25T120

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

DC collector current

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area

VCE ≤ 1200V, Tj ≤ 150°C

Diode forward current

TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage

Short circuit withstand time2)

VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C

Power dissipation

TC = 25°C

Operating junction temperature

Storage temperature

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Tj

Tstg

Package

PG-TO-247-3

Value

1200

50

25

75

75

50

25

75

±20

10

190

-40...+150

-55...+150

Unit

V

A

V

µs

W

°C

1 J-STD-020 and JESD-022

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2.2 Sep 08

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