IKA08N65F5
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=4.0A,
diF/dt=800A/µs
Tvj=150°C,
VR=400V,
IF=2.0A,
diF/dt=800A/µs
-
56
- ns
- 0.27 - µC
- 7.5 - A
- -134 - A/µs
-
42
- ns
- 0.19 - µC
- 7.4 - A
- -240 - A/µs
7
Rev.1.1,2012-11-09