IKA08N65F5(2012) 데이터 시트보기 (PDF) - Infineon Technologies

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IKA08N65F5
(Rev.:2012)

650V DuoPack IGBT and Diode High speed switching series fifth generation

Infineon Technologies 

1000

Ciss

Coss

Crss

100

10

IKA08N65F5

Highspeedswitchingseriesfifthgeneration

D=0.5

1

0.2

0.1

0.05

0.02

0.01

single pulse

0.1

1

0

5

10

15

20

25

30

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 17. Typicalcapacitanceasafunctionof

collector-emittervoltage

(VGE=0V,f=1MHz)

i:

1

2

3

4

5

6

ri[K/W]: 0.5538076 0.8276154 0.4749528 0.4651059 1.652781 0.8257374

τi[s]: 1.7E-4

1.1E-3

8.6E-3

0.0926713 1.371172 7.214481

0.01

1E-5 1E-4 0.001 0.01 0.1 1

10 100

tp,PULSEWIDTH[s]

Figure 18. IGBTtransientthermalresistance

(D=tp/T)

70

Tj=25°C, IF = 4A

65

Tj=150°C, IF = 4A

1

D=0.5

60

0.2

55

0.1

0.05

50

0.02

0.1

0.01

45

single pulse

40

35

0.01

30

i:

1

2

3

4

5

6

ri[K/W]: 0.9520941 1.171948 0.5287944 0.4647577 1.671981 0.8104246

τi[s]: 2.1E-4

1.1E-3 8.9E-3

0.09325149 1.367755 7.182978

0.001

1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100

tp,PULSEWIDTH[s]

Figure 19. Diodetransientthermalimpedanceasa

functionofpulsewidth

(D=tp/T)

25

20

600 700 800 900 1000 1100 1200 1300 1400 1500 1600

diF/dt,DIODECURRENTSLOPE[A/µs]

Figure 20. Typicalreverserecoverytimeasafunction

ofdiodecurrentslope

(VR=400V)

12

Rev.1.1,2012-11-09

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