DG858DW45 데이터 시트보기 (PDF) - Dynex Semiconductor

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DG858DW45

Gate Turn-Off Thyristor

Dynex Semiconductor 

DG858DW45

0.9VD

VD

0.9IT

dVD/dt

IT

VD VDM

0.1VD

td tr

dIFG/dt

tgt

IFG

0.1IFG

VFG

tw1

VDP

tgs

ITAIL

tgf

tgq

IG(ON)

0.1IGQ

QGQ

0.5IGQM

IGQM

V(RG)BR

VRG

Recommended gate conditions:

ITCM = 3000A

IFG = 40A

IG(ON) = 10A d.c.

tw1(min) = 20µs

IGQM = 1200A

diGQ/dt = 40A/µs

QGQ = 12500µC

VRG(min) = 2V

VRG(max) = 18V

These are recommended Dynex Semiconductor conditions. Other conditions are permitted

according to users gate drive specifications.

Figure 3. General switching waveforms

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