DG858DW45(2000) 데이터 시트보기 (PDF) - Dynex Semiconductor

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DG858DW45
(Rev.:2000)

Gate Turn-Off Thyristor

Dynex Semiconductor 

DG858DW45

SURGE RATINGS

Symbol

Parameter

Conditions

ITSM

I2t

diT/dt

dVD/dt

LS

Surge (non-repetitive) on-state current 10ms half sine. Tj = 125oC

I2t for fusing

Critical rate of rise of on-state current

Rate of rise of off-state voltage

10ms half sine. Tj =125oC

VD = 3000V, IT = 3000A, Tj =125oC

IFG > 40A, Rise time < 1.0µs

To 66% VDRM; RGK ≤ 22Ω, Tj = 125oC

To 66% VDRM; VRG = -2V, Tj = 125oC

Peak stray inductance in snubber circuit IT = 3000A, VD = VDRM, Tj = 125˚C,

diGQ/dt = 40A/µs, Cs = 4.0µF

Max. Units

20.0

kA

2.0 x 106 A2s

300 A/µs

20

V/µs

750 V/µs

200 nH

GATE RATINGS

Symbol

Parameter

VRGM

IFGM

PFG(AV)

PRGM

diGQ/dt

tON(min)

t

OFF(min)

Peak reverse gate voltage

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

Minimum permissable on time

Minimum permissable off time

Conditions

Min. Max. Units

This value maybe exceeded during turn-off -

16

V

20 100 A

-

20 W

-

24 kW

20 60 A/µs

50

-

µs

100 -

µs

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Conditions

Min. Max. Units

Double side cooled

- 0.011 oC/W

Rth(j-hs) DC thermal resistance - junction to

heatsink surface

Rth(c-hs) Contact thermal resistance

Anode side cooled

- 0.017 oC/W

Cathode side cooled

- 0.03 oC/W

Clamping force 40kN

With mounting compound

per contact

- 0.0021 oC/W

Tvj

T /T

OP stg

-

Virtual junction temperature

Operating junction/storage temperature range

Clamping force

-40 125 oC

-40 125 oC

36.0 44.0 kN

2/7

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