HT6116 데이터 시트보기 (PDF) - Holtek Semiconductor
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HT6116 Datasheet PDF : 10 Pages
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HT6116-70
A.C. Characteristics
Read cycle
Symbol
Parameter
tRC
Read Cycle Time
tAA
Address Access Time
tACS
Chip Select Access Time
tOE
Output Enable to Output Valid
tOH
Output Hold from Address Change
tCLZ
Chip Enable to Output in Low-Z
tOLZ
Output Enable to Output in Low-Z
tOHZ Output Disable to Output in High–Z
tCHZ Chip Disable to Output in High-Z
(VDD=5V±10%, GND=0V, Ta=–40°C to +85°C)
Min.
Typ. Max. Unit
70
36
—
ns
—
35
70
ns
—
35
70
ns
—
12
40
ns
10
12
—
ns
10
—
—
ns
10
—
—
ns
0
—
30
ns
0
—
30
ns
Note: 1. A read occurs during the overlap of a low CS and a high WE
2. tCHZ and tOHZ are specified by the time when data out is floating
Write cycle
(VDD=5V±10%, GND=0V, Ta=–40°C to +85°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
tWC
tDW
tDH
tAW
tAS
tWP
tWR
tCW
tOW
tOHZ
tWHZ
Write Cycle Time
Data Set up Time
Data Hold Time from Write Time
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
Chip Selection to End of Write
Output Active from End of Write
Output Disable to Output in High-Z
Write to Output in High-Z
70
36
—
ns
20
18
—
ns
5
0
—
ns
50
15
—
ns
20
14
ns
25
0
—
ns
5
—
—
ns
35
—
—
ns
5
—
—
ns
0
—
40
ns
0
—
50
ns
Note: 1. A write cycle occurs during the overlap of a low CS and a low WE
2. OE may be both high and low in a write cycle
3. tAS is specified from CS or WE, whichever occurs last
4. tWP is an overlap time of a low CS and a low WE
5. tWR, tDW and tDH is specified from CS or WE, whichever occurs first
6. tWHZ is specified by the time when DATA OUT is floating, not defined by output level
7. When I/O pins are data output mode, don’t force inverse signals to those pins
4
3rd July ’97
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