5962-9314001HZC 데이터 시트보기 (PDF) - HP => Agilent Technologies
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5962-9314001HZC Datasheet PDF : 12 Pages
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90 V/1.0 Ω, Hermetically Sealed,
Power MOSFET Optocoupler
Technical Data
HSSR-711X*
5962-9314001
*See matrix for available extensions
Features
• Dual Marked with Device
Part Number and DSCC
Standard Microcircuit
Drawing
• ac/dc Signal & Power
Switching
• Compact Solid-State
Bidirectional Switch
• Manufactured and Tested on
a MIL-PRF-38534 Certified
Line
• QML-38534
• MIL-PRF-38534 Class H
• Space Level Processing
Available
• Hermetically Sealed 8-Pin
Dual In-Line Package
• Small Size and Weight
• Performance Guaranteed
over -55°C to +125°C
• Connection A
0.8 A, 1.0 Ω
• Connection B
1.6 A, 0.25 Ω
• 1500 Vdc Withstand Test
Voltage
• High Transient Immunity
• 5 Amp Output Surge Current
Applications
• Military and Space
• High Reliability Systems
• Standard 28 Vdc and 48 Vdc
Load Driver
• Standard 24 Vac Load Driver
• Aircraft Controls
• ac/dc Electromechanical and
Solid State Relay
Replacement
• I/O Modules
• Harsh Industrial
Environments
Description
The HSSR-7110, HSSR-7111 and
SMD 5962-9314001 are single
channel power MOSFET
optocouplers, constructed in
eight-pin, hermetic, dual-in-line,
ceramic packages. The devices
operate exactly like a solid-state
relay. The products are capable of
operation and storage over the
full military temperature range
and can be purchased as a
standard product (HSSR-7110),
with full MIL-PRF-38534 Class H
testing (HSSR-7111), or from the
DSCC Standard Microcircuit
Drawing (SMD) 5962-93140.
These devices may be purchased
with a variety of lead bend and
plating options. See Selection
Guide Table for details. Standard
Microcircuit (SMD) parts are
available for each lead style.
Functional Diagrams
CONNECTION A
AC/DC CONNECTION
1 NC
IF
+2
VF
–3
IO
8+
7
VO
6
4 NC
5–
CONNECTION B
DC CONNECTION
1 NC
IF
+2
VF
–3
IO
8
+
VO
7
–
6
4 NC
5
TRUTH TABLE
INPUT OUTPUT
H
CLOSED
L
OPEN
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component
to prevent damage and/or degradation which may be induced by ESD.
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