5962F9953601QXC 데이터 시트보기 (PDF) - Intersil

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5962F9953601QXC

Radiation Hardened High Frequency Half Bridge Driver

Intersil 

Die Characteristics

DIE DIMENSIONS:

4710µm x 3570µm (186 mils x 141 mils)

Thickness: 483µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ ±1.0kÅ

Top Metallization:

Type: ALSiCu

Thickness: 16.0kÅ ±2kÅ

Substrate:

Radiation Hardened Silicon Gate,

Dielectric Isolation

Metallization Mask Layout

HS-2100RH

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

<2.0 x 105 A/cm2

Transistor Count:

125

HS-2100RH

SD (13)

LIN (14)

VSS (15)

HIN (12)

VDD (11)

LO (1)

COM (2)

VCC (3)

HO (8)

VB (7)

VS (6)

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

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