HS-302EH 데이터 시트보기 (PDF) - Intersil
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HS-302EH Datasheet PDF : 3 Pages
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HS-302RH, HS-302EH
Die Characteristics
DIE DIMENSIONS:
(2130µm x 1930µm x 533µm ±25.4µm)
84 x 76 x 21mils ±1mil
METALLIZATION:
Type: Al
Thickness: 12.5kÅ ±2kÅ
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Silicon
PASSIVATION:
Type: Silox (SiO2)
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
TRANSISTOR COUNT:
76
PROCESS:
Metal Gate CMOS, Dielectric Isolation
Metallization Mask Layout
HS-302RH, HS-302EH
D3
D4
D1
D2
S1
S2
IN1
IN2
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3
FN4603.2
April 1, 2013
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