HN2D01F(2014) 데이터 시트보기 (PDF) - Toshiba
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HN2D01F Datasheet PDF : 4 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01F
Ultra High Speed Switching Application
HN2D01F
Unit: mm
z HN2D01F is composed of 3 independent diodes.
z Low forward voltage
: VF (3) = 0.98V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.5μF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
240 (*)
mA
Average forward current
IO
80 (*)
mA
Surge current (10ms)
Power dissipation
IFSM
P
1 (*)
A
300
mW
Junction temperature
Storage temperature range
Tj
125
°C
JEDEC
Tstg
−55 to 125
°C
JEITA
―
SC-74
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3K1C
temperature/current/voltage and the significant change in
Weight: 0.015g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75 %f the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA (Fig.1)
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.20
―
―
0.1
μA
―
―
0.5
―
0.5
3.0
pF
―
1.6
4.0
ns
Start of commercial production
1988-11
1
2014-03-01
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