HN1D03F 데이터 시트보기 (PDF) - Toshiba
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HN1D03F Datasheet PDF : 4 Pages
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Fig.1 Reverse Recovery Time (trr) Test Circuit
HN1D03F
Unit 1 Electrical Characteristics (Q1, Q2 Common) (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA (fig.1)
Unit 2 Electrical Characteristics (Q3, Q4 Common) (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA (fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9
3.0 pF
―
1.6
4.0
ns
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
―
―
0.1
μA
―
―
0.5
―
2.2
4.0 pF
―
1.6
4.0
ns
2
2014-03-01
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