HN1D01FE 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
일치하는 목록
HN1D01FE Datasheet PDF : 4 Pages
| |||
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FE
Ultra High Speed Switching Application
z HN1D02FU is composed of 2 unit of cathode common.
z Low forward voltage
: VF (3) = 0.92V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 2.2pF (typ.)
HN1D01FE
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
VR
IFM
IO
IFSM
P
80
V
300*
mA
100*
mA
2*
A
100**
mW
1. CATHODE
2. CATHODE
3. ANODE
4. CATHODE
5. CATHODE
6. ANODE
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
1-2X1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
Weight: 0.003g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).
Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode
are 75% of those for a single diode.
** : Total rating.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 10mA (fig.1)
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
―
―
0.1
μA
―
―
0.5
―
2.2
―
pF
―
1.6
―
ns
Start of commercial production
2002-04
1
2014-03-01
Share Link: 