HMMC-5023 데이터 시트보기 (PDF) - HP => Agilent Technologies
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HMMC-5023 Datasheet PDF : 6 Pages
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HMMC-5023 Applications
The HMMC-5023 low noise
amplifier (LNA) is designed for
use in digital radio communica-
tion systems that operate within
the 21.2 GHz to 23.6 GHz fre-
quency band. High gain and low
noise temperature make it ideally
suited as a front-end gain stage.
The MMIC solution is a cost
effective alternative to hybrid
assemblies.
Biasing and Operation
The HMMC-5023 has four cas-
caded gain stages as shown in
Figure 1. The first two gain stages
at the input are biased with the
VD1 drain supply. Similarly the
two output stages are biased with
the VD2 supply. Standard LNA
operation is with a single positive
DC drain supply voltage
(VD1=VD2 =5 V) using the assem-
bly diagram shown in Figure 9(a).
If desired, the output stage DC
supply voltage (VD2) can be
increased to improve output
power capability while maintain-
ing optimum low noise bias
conditions for the input section.
The output power may also be
adjusted by applying a positive
voltage at VG2 to alter the operat-
ing bias point for both output
INPUT STAGE
FETs. Increasing the voltage
applied to VG2 (more positively)
results in a more negative gate-to-
source voltage and, therefore,
lower drain current. Figures 9(b)
and 9(c) illustrate how the device
can be assembled for both
independent drain supply opera-
tion and for output-stage gate
bias control.
No ground wires are required
since ground connections are
made with plated through-holes
to the backside of the device.
Assembly Techniques
Solder die attach using a fluxless
gold-tin (AuSn) solder preform is
the recommended assembly
method. A conductive epoxy such
as ABLEBOND® 71-1LM1 or
ABLEBOND® 36-2 may also be
used for die attaching provided
the Absolute Maximum Thermal
Ratings are not exceeded. The
device should be attached to an
electrically conductive surface to
complete the DC and RF ground
paths. Ground path inductance
should be minimized (<10 pH) to
assure stable operation. The
backside metallization on the
device is gold.
It is recommended that the RF
input and RF output connections
be made using either 500 line/inch
(or equivalent) gold wire mesh, or
dual 0.7 mil diameter gold wire.
The RF wires should be kept as
short as possible to minimize
inductance. The bias supply wire
can be a 0.7 mil diameter gold
wire attached to either of the
VDD bonding pads.
Thermosonic wedge is the
preferred method for wire
bonding to the gold bond pads.
Mesh wires can be attached using
a 2 mil round tacking tool and a
tool force of approximately
22␣ grams with an ultrasonic
power of roughly 55 dB for a
duration of 76 ± 8 msec. A guided-
wedge at an ultrasonic power
level of 64 dB can be used for the
0.7 mil wire. The recommended
wire bond stage temperature is
150 ± 2°C.
For more detailed information
see HP application note #999
“GaAs MMIC Assembly and
Handling Guidelines.”
GaAs MMICs are ESD sensitive.
Proper precautions should be used
when handling these devices.
OUTPUT STAGE
IN
92 Ω
92 Ω
VG1
VD1
Figure 1. HMMC-5023 Simplified Schematic.
VG2
6-36
OUT
VD2
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