HMC756 데이터 시트보기 (PDF) - Hittite Microwave

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HMC756

GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 16 - 24 GHz

Hittite Microwave 

v01.0709

3

Absolute Maximum Ratings

Drain Bias Voltage (Vd)

RF Input Power (RFIN)

Channel Temperature

Continuous Pdiss (T= 85 °C)

(derate 86 mW/°C above 85 °C)

Thermal Resistance

(channel to die bottom)

Storage Temperature

Operating Temperature

+7V

+26 dBm

150 °C

5.6 W

11.7 °C/W

-65 to +150 °C

-40 to +85 °C

Outline Drawing

HMC756

GaAs PHEMT MMIC 1 WATT

POWER AMPLIFIER, 16 - 24 GHz

Typical Supply Current vs. Vdd

Vdd (V)

Idd (mA)

+6.5

757

+7.0

790

+7.5

832

Note: Amplifier will operate over full voltage ranges shown

above Vgg adjusted to achieve Idd = 790 mA at +7V

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Die Packaging Information [1]

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND PAD IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

8. OVERALL DIE SIZE ± .002

3 - 130

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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