HM628511H 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM628511H

4M High Speed SRAM (512-kword × 8-bit)

Hitachi -> Renesas Electronics 

HM628511H Series

4M High Speed SRAM (512-kword × 8-bit)

ADE-203-762D (Z)

Rev. 1.0

Sep. 15, 1998

Description

The HM628511H Series is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized

high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high

speed circuit designing technology. It is most appropriate for the application which requires high speed, high

density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged

in 400-mil 36-pin plastic SOJ.

Features

• Single 5.0 V supply : 5.0 V ± 10 %

• Access time 10 /12 /15 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current : 180 / 160 / 140 mA (max)

• TTL standby current : 70 / 60 / 50 mA (max)

• CMOS standby current : 5 mA (max)

: 1.2 mA (max) (L-version)

• Data retension current: 0.8 mA (max) (L-version)

• Data retension voltage: 2 V (min) (L-version)

• Center VCC and VSS type pinout

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