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HM6216255H

4M high Speed SRAM (256-kword × 16-bit)

Hitachi -> Renesas Electronics 

HM6216255H Series

4M high Speed SRAM (256-kword × 16-bit)

ADE-203-763D (Z)

Rev. 1.0

Sep. 15, 1998

Description

The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized

high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high

speed circuit designing technology. It is most appropriate for the application which requires high speed, high

density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged

in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.

Features

• Single 5.0 Vsupply : 5.0 V ± 10 %

• Access time: 10/12/15 ns (max)

• Completely static memory

 No clock or timing strobe required

• Equal access and cycle times

• Directly TTL compatible

 All inputs and outputs

• Operating current: 200/180/160 mA (max)

• TTL standby current: 70/60/50 mA (max)

• CMOS standby current: 5 mA (max)

: 1.2 mA (max) (L-version)

• Data retansion current: 0.8 mA (max) (L-version)

• Data retantion voltage: 2 V (min) (L-version)

• Center VCC and VSS type pinout

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