HM5116405 데이터 시트보기 (PDF) - Elpida Memory, Inc

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HM5116405

(HM5116405 / HM5117405) 16M EDO DRAM

Elpida Memory, Inc 

HM5116405 Series, HM5117405 Series

DC Characteristics

(Ta = 0 to +70˚C, VCC = 5 V ± 10%, VSS = 0 V) (HM5117405 Series)

HM5117405

-5

-6

-7

Parameter

Operating current*1, *2

Standby current

Symbol Min Max Min Max Min Max Unit

I CC1

— 100 — 90 — 80 mA

I CC2

— 2 — 2 — 2 mA

Test conditions

tRC = min

TTL interface

RAS, CAS = VIH

Dout = High-Z

— 1 — 1 — 1 mA

CMOS interface

RAS, CAS ≥ VCC – 0.2 V

Dout = High-Z

Standby current

(L-version)

I CC2

— 150 — 150 — 150 µA

CMOS interface

RAS, CAS ≥ VCC – 0.2 V

Dout = High-Z

RAS-only refresh current*2 ICC3

Standby current*1

I CC5

— 100 — 90 — 80 mA

— 5 — 5 — 5 mA

tRC = min

RAS = VIH

CAS = VIL

Dout = enable

CAS-before-RAS refresh

I CC6

current

— 100 — 90 — 80 mA

tRC = min

EDO page mode current*1, *3 ICC7

Battery backup current

I CC10

Input leakage current

I LI

Output leakage current

I LO

— 90 — 80 — 75 mA

— 350 — 350 — 350 µA

–10 10 –10 10 –10 10 µA

–10 10 –10 10 –10 10 µA

tHPC = min

CMOS interface

Dout = High-Z, CBR

refresh: tRC = 62.5 µs

tRAS ≤ 0.3 µs

0 V ≤ Vin ≤ 7 V

0 V ≤ Vin ≤ 7 V

Dout = disable

Output high voltage

VOH

2.4 VCC 2.4 VCC 2.4 VCC V

High Iout = –2 mA

Output low voltage

VOL

0 0.4 0 0.4 0 0.4 V

Low Iout = 2 mA

Notes : 1. ICC depends on output load condition when the device is selected. ICC max is specified at the

output open condition.

2. Address can be changed once or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

Data Sheet E0151H10

9

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