HFA3127/883 데이터 시트보기 (PDF) - Intersil
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HFA3127/883 Datasheet PDF : 7 Pages
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HFA3127
DESIGN INFORMATION
February 1995
Ultra High Frequency Transistor Array
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application
and design information only. No guarantee is implied.
Electrical Specifications at TA = +25oC
PARAMETERS
TEST CONDITIONS
Noise Figure
fT Current Gain-Bandwidth Product
Power Gain-Bandwidth Product, fMAX
Collector-to-Collector Leakage
f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50Ω
IC = 1mA, VCE = 5V
IC = 10mA, VCE = 5V
IC = 10mA, VCE = 5V
Collector-to-Base Capacitance
0V, 1MHz
Base-to-Emitter Capacitance
0V, 1MHz
Collector-to-Emitter Capacitance
0V, 1MHz
NOTE: Package interlead capacitance is taken into account for all capacitance measurements.
TYP
UNITS
3.5
dB
5.5
GHz
8
GHz
2.5
GHz
1
pA
1.6
pF
2.2
pF
1.9
pF
Typical Performance Curves
25
IB = 200µA
20
IB = 160µA
15
IB =120µA
10
IB = 80µA
5
IB = 40µA
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
VCE = 3V
160
140
120
100
80
60
40
20
0
1µ
10µ
100µ
1m
10m
COLLECTOR CURRENT (A)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR
CURRENT
100m
100m VCE = 3V
10m
IC
1m
IB
100µ
10µ
1µ
100n
10n
1n
0.5
0.6
0.7
0.8
0.9
1.0
BASE TO EMITTER VOLTAGE (V)
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE
TO EMITTER VOLTAGE
10.0
8.0
VCE = 3V
VCE = 5V
6.0
VCE = 1V
4.0
2.0
0
0.1
1.0
10
100
COLLECTOR CURRENT (mA)
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
Spec Number 511120
6
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