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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

HD74HCT1G14CME 데이터 시트보기 (PDF) - Renesas Electronics

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HD74HCT1G14CME
Renesas
Renesas Electronics Renesas
HD74HCT1G14CME Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HD74HCT1G14
Switching Characteristics
Ta = 25°C
Item
Symbol Min
Typ
Output rise / fall time tTLH
6
tTHL
Propagation delay time tPLH
10
tPHL
10
(CL = 15 pF, tr = tf = 6 ns, VCC = 5 V)
Max
Unit Test Conditions
10
ns
Test circuit
17
ns
Test circuit
17
Item
VCC Ta = 25°C
Ta = –40 to 85°C
Symbol (V) Min Typ Max Min Max Unit Test Conditions
Output rise / fall time tTLH
tTHL
4.5 — 14 25 —
31
ns Test circuit
Propagation delay time tPLH
4.5 — 16.4 27 —
31
ns Test circuit
tPHL
4.5 — 16.4 27 —
31
Input capacitance
CIN
— — 2.5 5 —
5
pF
Equivalent capacitance CPD
— — 10 — —
pF
(CL = 50 pF, tr = tf = 6 ns)
Note: CPD is equivalent capacitance inside of the IC calculated from the operating current without load (see
test circuit). The average operating current without load is calculated according to the expression
below.
ICC (opr) = CPD VCC fIN + ICC
Rev.5.00, Jan.28.2004, page 5 of 7

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