CXT2222A
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
hie
hie
hre
hre
hfe
hfe
hoe
hoe
rb’Cc
NF
td
tr
ts
tf
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
VCE=10V, IC=10mA, f=1.0kHz
0.25
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
50
VCE=10V, IC=10mA, f=1.0kHz
75
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
VCE=10V, IC=10mA, f=1.0kHz
25
VCB=10V, IE=20mA, f=31.8MHz
VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
VCC=30V, IC=150mA, IB1=IB2=15mA
SOT-89 CASE - MECHANICAL OUTLINE
MAX
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
10
25
225
60
UNITS
kΩ
kΩ
x10-4
x10-4
μS
μS
ps
dB
ns
ns
ns
ns
(Bottom View)
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R6 (23-February 2010)