HBTGFR421-KR 데이터 시트보기 (PDF) - SEOUL SEMICONDUCTOR
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HBTGFR421-KR Datasheet PDF : 13 Pages
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2. Absolute maximum ratings
Parameter
Symbol
Power Dissipation
Forward Current
Peak Forward Current
Operating Temperature
Storage Temperature
Pd
IF
IFM *1
Topr.
Tstg.
Red
69
Value
Green
66
(Ta=25℃)
Blue
66
Unit
mW
30
20
20
mA
100
50
50
mA
-40 ~ 85
℃
-40 ~ 100
℃
*1 IFM conditions: Pulse width Tw≤ 1msec and Duty ratio≤1/10.
3. Electro-Optical Characteristics
Parameter
Forward
Voltage
Reverse
Current
Luminous
Intensity*2
Wavelength
Spectral
Bandwidth
Viewing
Angle*3
color
Red
Green
Blue
R/G/B
Red
Green
Blue
Red
Green
Blue
Red
Green
Blue
R,G,B
Symbol Condition
VF
IF=10 ㎃
IR
VR=5V
IV
IF=10 ㎃
λd
IF=20 ㎃
Δλ
2θ1/2
IF=10 ㎃
IF=30 ㎃
(total)
Min
1.7
2.7
2.7
-
50
90
25
615
515
465
-
Typ
1.9
3.1
3.0
-
70
220
50
625
525
472
15
30
20
120
(Ta=25℃)
Max Unit
2.3
3.3
V
3.3
10
㎂
90
270 mcd
85
635
535
nm
477
nm
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of the LED package.
*3 θ1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] Tolerance : Iv ± 10%, λD ± 2nm, , VF ± 0.1V
Rev. 02
January 2012
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
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