HA1127P 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HA1127P

5 Transistor Arrays

Hitachi -> Renesas Electronics 

HA1127, HA1127P, HA1127FP

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

HA1127

Unit

Collector base voltage

Collector substrate voltage

Collector emitter voltage

Emitter-base voltage

Collector current

Allowable collector power

Allowable collector power

VCBO

VCIO

VCEO

VEBO

IC

PC*1

PC

20

V

20

V

15

V

5

V

50

mA

300

mW

750*2

mW

625*3

Operating temperature

Topr

–55 to +125

°C

Storage temperature

Tstg

–55 to +125

°C

Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at

3 mW/°C above that temperature.

2. Allowable value for the whole package.

This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 mW/°C above that

temperature.

3. See page 51.

504

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