HA-2626 데이터 시트보기 (PDF) - Intersil

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HA-2626

100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers

Intersil 

Die Characteristics

DIE DIMENSIONS:

69 mils x 56 mils x 19 mils

1750µm x 1420µm x 483µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16kÅ ±2kÅ

SUBSTRATE POTENTIAL (POWERED UP):

Unbiased

Metallization Mask Layout

HA-2620, HA-2625

PASSIVATION:

Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)

Silox Thickness: 12kÅ ±2kÅ

Nitride Thickness: 3.5kÅ ±1.5kÅ

TRANSISTOR COUNT:

140

PROCESS:

Bipolar Dielectric Isolation

HA-2620, HA-2625

COMP

V+

BAL

OUT

-IN

+IN

V-

BAL

7

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