GT8G136 데이터 시트보기 (PDF) - Toshiba
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GT8G136 Datasheet PDF : 6 Pages
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GT8G136
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Symbol
Test Condition
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
VGE = ± 6 V, VCE = 0
VCE = 400 V, VGE = 0
IC = 1 mA, VCE = 5 V
IC = 150 A, VGE = 3 V
VCE = 10 V, VGE = 0, f = 1 MHz
tr
3V
0
ton
51 Ω
tf
VIN: tr <= 100 ns
tf <= 100 ns
≒300V
toff
Duty cycle <= 1%
Min Typ. Max Unit
⎯
⎯ ± 10 μA
⎯
⎯
10
μA
0.65 1.0 1.35
V
⎯
3.5
⎯
V
⎯ 2500 ⎯
pF
⎯ 1.5 ⎯
⎯
1.7
⎯
μs
⎯
1.6
⎯
⎯
1.9
⎯
Note
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Repetitive rating: pulse width limited by maximum junction temperature.
Note 2a : Device mounted on
a glass-epoxy board (a)
FR-4
25.4 × 25.4 × 0.8
(unit : mm)
Note 2b : Device mounted on
a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit : mm)
for COLLECTOR
for EMITTER
for GATE
for GATE
for COLLECTOR
for EMITTER
Note 3: ○ on lower right of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
※ Pb-Free Finish (Only a coating lead terminal) :
It is marking about an underline to a week of manufacture mark.
2
2007-04-23
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