GP1A58HRJ00F 데이터 시트보기 (PDF) - Sharp Electronics
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GP1A58HRJ00F
Sharp Electronics
GP1A58HRJ00F Datasheet PDF : 12 Pages
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■ Design Considerations
● Recommended operating conditions
Parameter
Output current
Forward current
Operating terperature
Symbol MIN. TYP. MAX. Unit
IO
−
−
16
mA
IF
10
−
20
mA
Topr
0
−
70
˚C
GP1A58HRJ00F
● Notes about static electricity
Transisiter of detector side in bipolar configuration may be damaged by static electricity due to its minute
design.
When handing these devices, general countermeasure against static electricity should be taken to avoid
breakdown of devices or degradation of characteristics.
● Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) In order to stabilize power supply line, connect a by-pass capacitor of more than 0.01μF between VCC and
GND near the device.
3) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
4mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
● Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
Sheet No.: D3-A04001EN
7
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