F1S4N100 데이터 시트보기 (PDF) - Intersil
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F1S4N100 Datasheet PDF : 6 Pages
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Data Sheet
RFP4N100, RF1S4N100SM
August 1999 File Number 2457.4
4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Formerly developmental type TA09850.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP4N100
TO-220AB
RFP4N100
RF1S4N100SM
TO-263AB
F1S4N100
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 4.3A, 1000V
• rDS(ON) = 3.500Ω
• UIS Rating Curve (Single Pulse)
• -55oC to 150oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-528
CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
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