G8370-81 데이터 시트보기 (PDF) - Hamamatsu Photonics

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G8370-81

InGaAs PIN photodiode

Hamamatsu Photonics 

InGaAs PIN photodiode G8370-81/-82/-83/-85

s Spectral response

1.2

(Typ. Ta=25 ˚C)

1.0

0.8

0.6

0.4

0.2

0

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

WAVELENGTH (µm)

KIRDB0374EA

s Photo sensitivity linearity

(Typ. Ta=25 ˚C, λ=1.3 µm, RL=2 Ω, VR=0 V)

102

100

G8370-81

98

G8370-82

96

94

G8370-83

G8370-85

92

90

0 2 4 6 8 10 12 14 16

INCIDENT LIGHT LEVEL (mW)

KIRDB0298EA

s Shunt resistance vs. ambient temperature

10 GΩ

(Typ. VR=10 mV)

1 GΩ

G8370-81

100 MΩ

10 MΩ

1 MΩ

G8370-85

G8370-82

G8370-83

s Photo sensitivity temperature characteristic

(Typ. Ta=25 ˚C)

2

1

0

-1

0.8

1.0

1.2

1.4

1.6

1.8

WAVELENGTH (µm)

KIRDB0042EA

s Terminal capacitance vs. reverse voltage

10 nF

(Typ. Ta=25 ˚C, f=1 MHz)

1 nF

G8370-85

G8370-82

G8370-83

100 pF

G8370-81

10 pF

1 pF

0.01

0.1

1

10

REVERSE VOLTAGE (V)

100

KIRDB0299EA

100 kΩ

-40 -20 0

20 40 60 80 100

AMBIENT TEMPERATURE (˚C)

KIRDB0300EA

2

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