FSJ260R1 데이터 시트보기 (PDF) - Intersil
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FSJ260R1 Datasheet PDF : 8 Pages
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FSJ260D, FSJ260R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
Reverse Recovery Time
VSD
ISD = 44A
trr
ISD = 44A, dISD/dt = 100A/µs
0.6
-
1.8
V
-
-
560
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts (Note 3)
BVDSS
VGS = 0, ID = 1mA
200
Gate to Source Threshold Volts
(Note 3)
VGS(TH)
VGS = VDS, ID = 1mA
1.5
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 160V
-
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON)
VGS = 12V, ID = 44A
-
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12 VGS = 12V, ID = 28A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
Single Event Effects (SEB, SEGR) (Note 4)
MAX
-
4.0
100
25
2.31
0.050
UNITS
V
V
nA
µA
V
Ω
TEST
SYMBOL
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
APPLIED
VGS BIAS
(V)
Single Event Effects Safe Operating
SEESOA
Ni
26
43
-20
Area
Br
37
36
-5
Br
37
36
-10
Br
37
36
-15
Br
37
36
-20
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
200
200
160
100
40
Typical Performance Curves Unless Otherwise Specified
LET = 26MeV/mg/cm2, RANGE = 43µ
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
200
160
120
80
40
TEMP = 25oC
0
0
-5
-10
-15
-20
-25
VGS (V)
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
1E-3
1E-4
1E-5
1E-6
ILM = 10A
30A
100A
300A
1E-7
10
30
100
300
DRAIN SUPPLY (V)
1000
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO IAS
3-145
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