FS30VSJ-3-T11 데이터 시트보기 (PDF) - Renesas Electronics
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FS30VSJ-3-T11 Datasheet PDF : 7 Pages
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FS30VSJ-3
High-Speed Switching Use
Nch Power MOS FET
Features
• Drive voltage : 4 V
• VDSS : 150 V
• rDS(ON) (max) : 86 mΩ
• ID : 30 A
• Integrated Fast Recovery Diode (TYP.) : 100 ns
Outline
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
2, 4
4
1
2
3
1
3
REJ03G1416-0200
(Previous: MEJ02G0081-0101)
Rev.2.00
Aug 07, 2006
1. Gate
2. Drain
3. Source
4. Drain
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Ratings
150
±20
30
120
30
30
120
70
– 55 to +150
– 55 to +150
1.2
(Tc = 25°C)
Unit
Conditions
V
VGS = 0 V
V
VDS = 0 V
A
A
A
L = 100 µH
A
A
W
°C
°C
g
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
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