FM24CL16 데이터 시트보기 (PDF) - Unspecified
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FM24CL16 Datasheet PDF : 13 Pages
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3. High noise environments. Writing to EEPROM
in a noisy environment can be challenging. When
severe noise or power fluctuations are present, the
long write time of EEPROM creates a window of
vulnerability during which the write can be corrupted.
The fast write of FRAM is complete within a
microsecond. This time is typically too short for noise
or power fluctuation to disturb it.
4. Time to market. In a complex system, multiple
software routines may need to access the nonvolatile
memory. In this environment the time delay
associated with programming EEPROM adds undue
complexity to the software development. Each
software routine must wait for complete programming
before allowing access to the next routine. When time
to market is critical, FRAM can eliminate this simple
obstacle. As soon as a write is issued to the
FM24CL16, it is effectively done -- no waiting.
5. RF/ID. In the area of contactless memory, FRAM
provides an ideal solution. Since RF/ID memory is
FM24CL16
powered by an RF field, the long programming time
and high current consumption needed to write
EEPROM is unattractive. FRAM provides a superior
solution. The FM24CL16 is suitable for multi-chip
RF/ID products.
6. Maintenance tracking. In sophisticated systems,
the operating history and system state during a failure
is important knowledge. Maintenance can be
expedited when this information has been recorded.
Due to the high write endurance, FRAM makes an
ideal system log. In addition, the convenient 2-wire
interface of the FM24CL16 allows memory to be
distributed throughout the system using minimal
additional resources.
Rev 2.2
July 2003
Page 8 of 13
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