FFD10UP20S 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

일치하는 목록

FFD10UP20S

10 A, 200 V, Ultrafast Diode

Fairchild Semiconductor 

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol

Parameter

Maximum Instantaneous Forward Voltage

VF*

IF = 10 A

IF = 10 A

IR*

Maximum Instantaneous Reverse Current

@ rated VR

trr

Irr

Qrr

Reverse Recovery Time

Reverse Recovery Current

Reverse Recovery Charge

(IF = 10 A, diF/dt = 200 A/s, VR=130 V)

trr

Maximum Reverse Recovery Time

(IF = 1 A, diF/dt = 100 A/s)

WAVL

Avalanche Energy ( L = 40 mH)

** Pulse Test: Pulse Width = 300s, Duty Cycle = 2%

TC

TC

=

=

25oC

100oC

TC

TC

=

=

25oC

100oC

Test Circuit and Waveforms

Min.

-

-

-

-

-

-

-

-

10

Typ.

Max.

Unit

-

1.15

V

-

1.10

-

-

100

500

A

20.8

-

ns

2.8

-

A

28.5

-

nC

-

35

ns

-

-

mJ

Figure 1. Diode Reverse Recovery Test Circuit & Waveform

Figure 2. Unclamped Inductive Switching Test Circuit & Waveform

©2008 Fairchild Semiconductor Corporation

FFD10UP20S Rev. C2

2

www.fairchildsemi.com

Share Link: