FDB2552 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB2552 Datasheet PDF : 11 Pages
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Typical Characteristics TC = 25°C unless otherwise noted
300
100
100
10µs
100µs
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1
10ms
SINGLE PULSE
DC
TJ = MAX RATED
TC = 25oC
0.1
1
10
100
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
80
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
60
40
TJ = 25oC
20
TJ = 175oC
TJ = -55oC
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
80
VGS = 10V
60
VGS = 6V
40
VGS = 5V
20
0
0
TC = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
42
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
40
38
VGS = 6V
36
34
VGS = 10V
32
30
0
10
20
30
40
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.5
2.0
1.5
1.0
0.5
-80
VGS = 10V, ID = 16A
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDB2552 / FDP2552 Rev. B
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