FDM6296 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDM6296 Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = 11.5A
8
6
4
2
VDD = 10V
VDD = 15V
VDD = 20V
0
0
5
10
15
20
25
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
3000
1000
Ciss
Coss
100
30
0.1
Crss
f = 1MHz
VGS = 0V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
100
rDS(on) LIMITED
10
100us
1ms
1
10ms
100ms
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
0.01
0.1
1
1s
10s
DC
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
500
100
10
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0-----–-----T---A---
125
SINGLE PULSE
1
RθJA = 135oC/W
0.5
10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
Figure 10. Single Pulse Maximum
Power Dissipation
2
1
0.1
0.01
1E-3
10-4
FDM6296 Rev.E
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 135oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
4
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