MT4LC4M16R6TG-5 데이터 시트보기 (PDF) - Micron Technology
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MT4LC4M16R6TG-5 Datasheet PDF : 24 Pages
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4 MEG x 16
EDO DRAM
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12) (VCC = +3.3V ±0.3V)
AC CHARACTERISTICS
PARAMETER
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period
Refresh period (“S” version)
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WE# to outputs in High-Z
WRITE command pulse width
WE# pulse widths to disable outputs
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
SYMBOL
tPC
tPRWC
tRAC
tRAD
tRAH
tRAS
tRASP
tRASS
tRC
tRCD
tRCH
tRCS
tREF
tREF
tRP
tRPC
tRPS
tRRH
tRSH
tRWC
tRWD
tRWL
tT
tWCH
tWCR
tWCS
tWHZ
tWP
tWPZ
tWRH
tWRP
MIN
20
47
9
7
50
50
100
84
11
0
0
30
5
90
0
13
116
67
13
2
8
38
0
5
10
8
8
-5
MAX
50
10,000
125,000
64
128
50
12
MIN
25
56
12
10
60
60
100
104
14
0
0
40
5
105
0
15
140
79
15
2
10
45
0
5
10
10
10
-6
MAX
60
10,000
125,000
64
128
50
15
UNITS
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
34
34
15
14, 28
16, 30
28
22, 23
23
16
35
18
35
18, 28
4 Meg x 16 EDO DRAM
D29_2.p65 – Rev. 5/00
10
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©2000, Micron Technology, Inc.
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