AEC-Q101(2017) 데이터 시트보기 (PDF) - Diodes Incorporated.
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AEC-Q101 Datasheet PDF : 7 Pages
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FZT949
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCER
BVCEO
BVEBO
Min
Typ.
-50
-80
-50
-80
-30
-45
-7
-8
Collector Cut-Off Current
ICBO
—
—
Collector Cut-Off Current
ICER
—
—
Emitter Cut-Off Current
IEBO
DC Current Transfer Static Ratio (Note 10)
hFE
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
VCE(SAT)
VBE(SAT)
VBE(ON)
—
—
100
200
100
200
75
140
—
35
—
-50
—
-85
—
-190
—
-350
—
-1,100
—
-900
Transitional Frequency (Note 10)
fT
—
100
Output Capacitance
Switching Time
COBO
tON
tOFF
—
122
—
120
—
130
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Max
—
—
—
—
-50
-1
-50
-1
-10
—
300
—
—
-75
-140
-270
-440
-1,250
-1,060
—
—
—
—
Unit
V
V
V
V
nA
µA
nA
µA
nA
—
mV
mV
mV
MHz
pF
ns
Test Condition
IC = -100µA
IC = -1µA, RB ≤ 1kΩ
IC = -10mA
IE = -100µA
VCB = -40V
VCB = -40V, TA = +100°C
VCE = -40V, R ≤ 1kΩ
VCE = -40V, TA = +100°C
VEB = -6V
IC = -10mA, VCE = -1V
IC = -1A, VCE = -1V
IC = -5A, VCE = -1V
IC = -20A, VCE = -2V
IC = -500mA, IB = -20mA
IC = -1A, IB = -20mA
IC = -2A, IB = -200mA
IC = -5.5A, IB = -500mA
IC = -5.5A, IB = -500mA
IC = -5.5A, VCE = -1V
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -4A,
IB1 = -IB2 = -400mA
FZT949
Datasheet Number: DS38008 Rev. 2 - 2
4 of 7
www.diodes.com
April 2017
© Diodes Incorporated
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