EN25S10 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.
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EN25S10 Datasheet PDF : 34 Pages
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EN25S10
EN25S10
1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 1.65-1.95 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 1 M-bit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
• High performance
- 75MHz clock rate
• Low power consumption
- 7 mA typical active current
- 1 μA typical power down current
• Uniform Sector Architecture:
- 32 sectors of 4-Kbyte
- 4 blocks of 32-Kbyte
- Any sector or block can be erased individually
• Software and Hardware Write Protection:
- Block Protect Bits are default set to “1” at
Power-up
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.5ms typical
- Sector erase time: 90ms typical
- Block erase time 300ms typical
- Chip erase time: 1 seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 contact USON 2x3 mm
- All Pb-free packages are RoHS compliant
• Industrial temperature Range
GENERAL DESCRIPTION
The EN25S10 is a 1 Megabit (128K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25S10 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25S10 can be configured to protect part of the memory as the software protected mode. The device
can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. F, Issue Date: 2011/11/07
www.eonssi.com
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