EN25P80 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.

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EN25P80

8 Mbit Uniform Sector, Serial Flash Memory

Eon Silicon Solution Inc. 

Table 12. DATA RETENTION and ENDURANCE

Parameter Description

Minimum Pattern Data Retention Time

Erase/Program Endurance

Test Conditions

150°C

125°C

-40 to 85 °C

EN25P80

Min

10

20

100k

Unit

Years

Years

cycles

Table 13. LATCH UP CHARACTERISTICS

Parameter Description

Input voltage with respect to Vss on all pins except I/O pins

(including A9, Reset and OE#)

Min

-1.0 V

Max

12.0 V

Input voltage with respect to Vss on all I/O Pins

-1.0 V

Vcc + 1.0 V

Vcc Current

-100 mA

100 mA

Note : These are latch up characteristics and the device should never be put under these conditions. Refer to

Absolute Maximum ratings for the actual operating limits.

Table 14. CAPACITANCE

( VCC = 2.7-3.6V)

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

6

pF

COUT

Output Capacitance

VOUT = 0

8

pF

Note : Sampled only, not 100% tested, at TA = 25°C and a frequency of 20MHz.

This Data Sheet may be revised by subsequent versions 26 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2006/12/25

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