EN25F05 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.

부품명

상세내역

일치하는 목록

EN25F05

512 Kbit Serial Flash Memory with 4Kbytes Uniform Sector

Eon Silicon Solution Inc. 

EN25F05

Write Enable (WREN) (06h)

The Write Enable (WREN) instruction (Figure 5) sets the Write Enable Latch (WEL) bit. The Write

Enable Latch (WEL) bit must be set prior to every Page Program (PP), Sector Erase (SE), Block

Erase (BE), Chip Erase (CE) and Write Status Register (WRSR) instruction.

The Write Enable (WREN) instruction is entered by driving Chip Select (CS#) Low, sending the

instruction code, and then driving Chip Select (CS#) High.

Figure 5. Write Enable Instruction Sequence Diagram

Write Disable (WRDI) (04h)

The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status

Register to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by

driving Chip Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip

Select (CS#) high. Note that the WEL bit is automatically reset after Power-up and upon completion

of the Write Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase

instructions.

Figure 6. Write Disable Instruction Sequence Diagram

Read Status Register (RDSR) (05h)

The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status

Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in

progress. When one of these cycles is in progress, it is recommended to check the Write In

Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the

Status Register continuously, as shown in Figure 7.

This Data Sheet may be revised by subsequent versions

9

or modifications due to changes in technical specifications.

©2004 Eon Silicon Solution, Inc., www.essi.com.tw

Rev. B, Issue Date: 2008/06/23

Share Link: