EN25B10 데이터 시트보기 (PDF) - Eon Silicon Solution Inc.
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EN25B10 Datasheet PDF : 31 Pages
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EN25B10
MEMORY ORGANIZATION
The memory is organized as:
z 131,072 bytes
z Flexible Sector Architecture
Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,three 32-Kbyte sectors
z Bottom or top boot configurations
z 512 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or
Bulk Erasable but not Page Erasable.
Table 2a. Bottom Boot Block Sector Architecture
Sector
6
5
4
3
2
1
0
SECTOR SIZE (KByte)
32
32
32
16
8
4
4
Address range
18000h – 1FFFFh
10000h – 17FFFh
08000h – 0FFFFh
04000h – 07FFFh
02000h – 03FFFh
01000h – 01FFFh
00000h – 00FFFh
Table 2b. Top Boot Block Sector Architecture (Special order)
Sector
6
5
4
3
2
1
0
SECTOR SIZE (KByte)
4
4
8
16
32
32
32
Address range
1F000h – 1FFFFh
1E000h – 1EFFFh
1C000h – 1DFFFh
18000h – 1BFFFh
10000h – 17FFFh
08000h – 0FFFFh
00000h – 07FFFh
This Data Sheet may be revised by subsequent versions
4
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. B, Issue Date: 2006/12/26
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