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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

EM4169B6CI2LB 데이터 시트보기 (PDF) - EM Microelectronic - MARIN SA

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EM4169B6CI2LB Datasheet PDF : 15 Pages
First Prev 11 12 13 14 15
The Write Configuration word command procedure is the
same as above, the only exception is that only CRC
verification and power check are done.
Writing to EEPROM lasts 20 ms.
After successful writing of EEPROM the IC sends an
acknowledge pattern to confirm the completion of writing.
Acknowledge pattern consists of switching the modulator
load ON and OFF with a signal period of 256 µs (Option 64
clocks/bit) or 128 µs (Option 32 clocks/bit) representing
half a bit period (a quarter of bit period ON, a quarter of bit
period OFF). Acknowledge pattern is transmitted during a
time equivalent to two bit periods. Pulses of this length do
not occur during data readout so the acknowledge pattern
is easily recognizable.
tRDB
tRDB
Acknowledge pattern
Fig. 13
After sending the acknowledge pattern the EM4069
transitions to the Start Bit Detection state and waits for the
start bit of next command. In this way, several words can
be written to EEPROM without returning in read mode after
every write. The value of the timer is 2 tRDB.
Disabling of Command Detection
In certain cases the IC logic blocks the detection of the
Synchronization pattern Envelope during one complete
readout cycle of 128 bits. This is valid in the following
cases :
at power up (after POR)
after a Reset command
after a time out occurs in the Start Bit Detection state
(only in the case the transition to Start Bit Detection
state was done from Read mode)
Details about command timing
Command timing is based on NRZ (non-return to zero)
modulation on the magnetic field (as shown in figure 11).
EM4069
EM4169
NRZ modulation is simple and leads to good results in
proximity of the reader. To send a bit-1, the reader does
not modulate the signal for a complete bit period, and to
send a bit-0, it modulates the carrier frequency during a
whole bit period.
Long streams of zeros (in write command data sequence
or CRC) reduce writing distance due to drop of supply
voltage under POR level, due to the long time the carrier
frequency is in LOW field mode.
The writing distance can be improved by using RTO (return
to one) modulation coding. Short burst of high field
(approximately 1/4 of bit period) during transmission of a
bit-0 to EM4069, recharge the on-board power supply
buffer capacitor. To operate in this way, it is important to be
synchronized with the sampling rate of the EM4069.
Figure 14 shows the processing of hexadecimal data “96”
in the write command string. The following signals are
drawn :
EM4069 : shows the modulator state. The “low” peak to
peak value indicates that the modulator load is connected,
and a “high” peak to peak value means that the modulator
load is disconnected.
NRZ : Reader generated field. Low field is forced when
sending a bit-0 and High field for a bit-1. The field is at the
same level for the whole bit duration.
RTO : Reader generated field as NRZ, with a burst of high
field during 1/4 period for the transmission of a bit-0.
At the beginning of timing diagram, the EM4069 is in start
bit detection state, modulator load and peak detector are
ON. When the start bit is detected, the logic transitions in
command processing state. 3/8 to 1/2 of a bit period after
beginning of start bit (T1), EM4069 starts putting the
modulator load half bit period OFF and half bit period ON.
The sample of field strength which gives to the logic the
value of bit is taken at the end of ON period.
Assuming that the start bit duration is 1 bit period, the
following bit samples are taken 3/8 to 1/2 of bit period after
start of each bit period. So during the last quarter of bit
period the field can be put high to recharge the EM4069
on-board capacitor.
The sampling point can be moved by changing the start bit
duration.
Copyright 2003, EM Microelectronic-Marin SA
11
www.emmicroelectronic.com

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