EM4056 데이터 시트보기 (PDF) - EM Microelectronic - MARIN SA

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EM4056

2KBIT Read/Write with ANTICOLLISION Contactless Identification Device

EM Microelectronic - MARIN SA 

EM4056

Absolute Maximum Ratings

Parameter

Voltage on Power

Supply pads

Voltage on other pads

Max. AC peak current

induced on COIL1 and

COIL2

Storage temperature

Operating temperature

Electrostatic discharge

max. to MIL-STS-883C

method 3015

Symbol

VDD

VPAD

ICOIL

TSTORE

TOP

VESD

Min.

-0.3

Max.

6.0

Units

V

VSS - 0.3 VDD+ 0.3 V

- 30

+ 30 mAp

-55

+125 oC

-40

+85

oC

1000

V

Stresses above these listed maximum ratings may cause

permanent damages to the device. Exposure beyond

specified operating conditions may affect device reliability

or cause malfunction.

Handling Procedures

This device has built-in protection against high static

voltages or electric fields; however, anti-static precautions

must be taken as for any other CMOS component. Unless

otherwise specified, proper operation can only occur when

all terminal voltages are kept within the voltage range.

Unused inputs must always be tied to a defined logic

voltage level.

Operating Conditions

Parameter

Max. AC Voltage on COIL

Max. AC coil current

Carrier frequency

Operating temperature

Symbol Min

VCOIL

ICOIL -10

fCOIL 100

TOP -40

Max Units

(Note 1) Vpp

+10 mAp

150 kHz

+85

°C

Note 1: Defined by forcing 10mA on Coil1-Coil2

Electrical Characteristics

Unless otherwise specified : VDD = 4.0 V, VSS = 0 V, TOP = 25°C, VCOIL = 4.5 Vpp, fCOIL = 125 KHz Sine wave

Parameter

Symbol

Conditions

Min Typ Max Unit

Supply voltage (not regulated)

VPOS-REG

(Note1) V

Supply voltage (regulated)

VDD

VPOS-REG = max (note 1)

3.4

4.3 V

Min. EEPROM Read voltage

VRD

Read mode (note 2)

2.5

V

Min. EEPROM Write voltage

VWR

Write mode

2.5

V

EEPROM Read current

IRD

Read mode

19 25 µA

EEPROM Write current

IWR

Write mode

60 80 µA

Power check EEPROM write

current

IPWCHK VDD = 4.0 V

70 95 µA

EEPROM pwr check threshold

voltage

VPWCHK

2.52 2.75 3.10 V

EEPROM data endurance

NCY

Erase all / Write all

105

cycle

EEPROM retention (note 3)

TRET

TOP = 55oC after 105 cycles 10

year

Voltage drop VCOIL- VSS on

modulator

VON

ICOIL = 100 µA

ICOIL = 5 mA

0.50 V

2.50 V

Resonance capacitor

CCOIL

330 340 350 pF

POR voltage (high)

VPRH

VDD rising

2.0 2.6 V

MONOFLOP delay

TMONO

25 50 85 µs

Min. voltage of clock extractor 1 VCLK1min

(note 4)

Vcoil1-coil2 (min for extraction)

4.5 Vpp

Min. voltage of clock extractor 2 VCLK2min Vcoil1-coil2 (min for extraction)

(note 5)

1.0 Vpp

Note 1: Max. supply voltage (not regulated) is defined by forcing a DC current 10 mAp in pins COIL1-COIL2

Note 2: The circuit is not functional under low level POR voltage

Note 4: Uplink

Note 3: Based on 1000 hours measurement at 150oC

Note 5: downlink

Copyright © 2005, EM Microelectronic-Marin SA

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