ELC-650-29-10 데이터 시트보기 (PDF) - EPIGAP optoelectronic GmbH

부품명

상세내역

일치하는 목록

ELC-650-29-10

LED - Chip

EPIGAP optoelectronic GmbH 

LED - Chip

Preliminary

Radiation

Red

Type

Point Source

360 ±20

330

Ø 25

115

PS-01

ELC-650-29-10

10.04.2007

rev. 04/07

Technology

AlInGaP/GaAs

Electrodes

N (cathode) up

typ. dimensions (µm)

typ. thickness

250 µm

cathode

gold alloy, 1.5 µm

anode

gold alloy, 0.5 µm

Maximum Ratings

Tamb = 25°C, unless otherwise specified

Parameter

Test

conditions

Symbol

Min

Typ

Forward current (DC)

IF

Optical and Electrical Characteristics

Tamb = 25°C, unless otherwise specified

Parameter

Test

conditions

Symbol

Min

Forward voltage

IF = 5 mA

VF

Reverse voltage

IR = 10 µA

VR

5

Radiant power*

IF = 5 mA

Φe

15

Luminous intensity*

IF = 5 mA

IV

Peak wavelength

IF = 5 mA

λp

640

Spectral bandwidth at 50% IF = 5 mA

∆λ0.5

Switching time

IF = 5 mA

tr, tf

*measured on bare chip on TO-18 header with EPIGAP equipment

Typ

2.3

17

3.0

650

20

40/30

Labeling

Type

ELC-650-29-10

Lot N°

IV(typ) [mcd] VF(typ) [V]

Packing: Chips on adhesive film with wire-bond side on top

Max

Unit

15

mA

Max

Unit

2.6

V

V

µW

mcd

660

nm

nm

ns

Quantity

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

1 of 1

Share Link: