ELC-1020-28-1 데이터 시트보기 (PDF) - EPIGAP optoelectronic GmbH

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ELC-1020-28-1

LED - Chip

EPIGAP optoelectronic GmbH 

LED - Chip

discontinued

Radiation

Infrared

460

360

300

Type

MQW

ELC-1020-28-1

10.04.2007

rev. 04/06

Technology

InGaAs/GaAs

Electrodes

N (cathode) up

typ. dimensions (µm)

typ. thickness

260 (±20) µm

cathode

gold alloy, 1.5 µm

anode

gold alloy, 1.5 µm,

solderable

PD-02

Optical and Electrical Characteristics

Tamb = 25°C, unless otherwise specified

Parameter

Test

conditions

Symbol

Min

Typ

Forward voltage

IF = 100 mA

VF

1.2

Reverse voltage

IR = 10 µA

VR

10

Radiant power1

IF = 100 mA

Φe

0.75

1.5

Radiant power2

IF = 100 mA

Φe

3.0

Peak wavelength

IF = 100 mA

λp

1000

1020

Spectral bandwidth at 50% IF = 100 mA

∆λ0.5

80

Switching time

IF = 100 mA

tr, tf

10

1Measured on bare chip on TO-18 header with EPIGAP equipment

2Measured on epoxy covered chip on TO-18 header with EPIGAP equipment

Labeling

Type

ELС-1020-28-1

Lot N°

Φe(typ) [mW] VF(typ) [V]

Packing: Chips on adhesive film with wire-bond side on top

Max

Unit

1.4

V

V

mW

mW

1050

nm

nm

ns

Quantity

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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